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September 23, 2026

BluGlass secures A$8.0 million R&D funding facility

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BLUGLASS JOINS LEADING GaN LIGHTING & ELECTRONICS CONSORTIUM

September 14, 2022 · BluGlass · Technology & Products
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About BluGlass

Developing leading-edge semiconductor manufacturing technology and devices for more than a decade, BluGlass Limited (ASX:BLG) is a leading supplier of GaN laser diode products to the global photonics industry, focused on the industrial, defence, bio-medical, and scientific markets.

Listed on the ASX, BluGlass is one of just a handful of end-to-end GaN laser manufacturers globally. Its operations in Australia and the USA offer cutting-edge, custom laser diode development and manufacturing, from small-batch custom lasers to medium and high-volume off-the-shelf products.

The Company combines its proprietary low temperature, low hydrogen remote plasma chemical vapour deposition (RPCVD) manufacturing process with advanced device design and fabrication to deliver differentiated laser solutions. With end-to-end capabilities spanning epitaxy, device design, fabrication, and testing, BluGlass is well-positioned to support critical next-generation photonics applications and sovereign supply chains.

For more information, please contact:

Stefanie Winwood
+61 2 9334 2300
[email protected]

James Lennon, Automic Markets
+61 414 035 704
[email protected]

Samuel Samhan, BluGlass CFO
[email protected]

Highlights

  • BluGlass has been invited to join the University of California, Santa Barbara’s (UCSB) Solid-State Lighting & Energy Electronics Centre (SSLEEC) consortium
  • Member companies are internationally recognised as contributing to the advancement of solid-state lighting & electronics
  • SSLEEC membership provides BluGlass with access to the UCSB’s pre-eminent gallium nitride (GaN) faculty and facilities, accelerating its advanced laser product roadmaps

Global semiconductor developer BluGlass Limited (ASX: BLG) is pleased to announce it has joined the University of California, Santa Barbara’s (UCSB) Solid-State Lighting & Energy Electronics Centre (SSLEEC) consortium; recognising the company’s leading innovation in RPCVD epitaxy growth, novel laser architectures, and longer-wavelength GaN devices.

The SSLEEC is an invitation-only collaboration between industry leaders and the pre-eminent University of California, Santa Barbara’s gallium nitride researchers, including blue-LED inventor and Nobel Laureate, Professor Shuji Nakamura, and industry luminary Professor Steven DenBaars. The consortium focuses on the development of new semiconductor technologies for energy-efficient lighting, disinfection, advanced mobile displays, augmented and virtual reality, communication, and power electronics. The SSLEEC works in collaboration and across scientific disciplines to address the most challenging problems in critical and timely areas of research.

The SSLEEC have been researching materials growth, simulation, characterisation, device design and fabrication for high-efficiency LEDs and laser diodes for more than 15 years. It is one of the most successful business models between universities and industry partners in the sector, producing more than 150 patents over the past six years.

Consortium membership provides BluGlass with access to UCSB’s world-class faculty, facilities, and specialist GaN researchers, which will be invaluable in accelerating product development roadmaps for its novel blue and green laser diodes.

Jim Haden, BluGlass President, said, “We are delighted to be invited to join the world’s leading GaN industry and academic consortium, which is a testament to the cutting-edge development being conducted at BluGlass. Our membership enables us to leverage the expertise of industry pioneers Drs. Shuji Nakamura and Steven DenBaars; and to fast-track our advanced product roadmaps. It also enhances our credibility with potential customers and partners, reinforcing our expertise in GaN laser diodes.”

“We are thrilled to be working with BluGlass, the world leader in RPCVD technology,” stated Professor Shuji Nakamura. Professor Steven DenBaar’s continued, “I believe that RPCVD technology has huge advantages for the next generation of GaN advanced semiconductor devices.”

  • GaN
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