FAQs

Remote plasma chemical vapour deposition works in a similar way to MOCVD (see below) where chemicals are introduced into the reaction chamber for decomposition.

Whereas MOCVD uses ammonia (NH3) as the source of nitrogen, RPCVD uses nitrogen gas (N2) passed through an electrical coil that generates a plasma. This arrangement provides a direct source of nitrogen used for the deposition of GaN.

The nitrogen plasma generation is not dependent on high temperature to provide a source of reactive nitrogen atoms. This allows for the growth of GaN to be carried out at much lower temperatures than those used in MOCVD while maintaining the critical crystalline quality necessary for high performance devices. Nitrogen is safer to handle and does not require scrubbing compared to highly toxic ammonia used in MOCVD.