RPCVD

Could RPCVD improve your device performance and help drive your next product?

Over the past decade, we have earned a reputation for helping our customers and partners solve complex technology problems by combining the best of traditional nitride growth techniques with our own unique low temperature, low resistivity nitride growth process – to enable novel and higher efficiency, lower cost devices.

Our revolutionary growth technology, called remote plasma chemical vapour deposition (RPCVD), offers many unique benefits to our customers – promising higher performing devices and a cleaner lower cost method of manufacture.

RPCVD combines the scalability potential of MOCVD with the unique benefits of a nitrogen plasma source to drive higher performance and enable novel laser diode, LED and microLED structures.

Growth temperatures several hundreds of degrees cooler than MOCVD
Low hydrogen growth
Increased Device Performance
Versatile And Novel Device Enabling
Scalability of MOCVD with the growth benefits of RPCVD in a single platform

Combining the benefits of MOCVD & RPCVD in a single platform

RPCVD offers manufacturers significant performance and cost advantages by growing group III nitrides such as gallium nitride and indium gallium nitride at lower temperatures, with the additional capability of hybrid MOCVD & RPCVD devices.

Lower temperature for brighter devices

Low temperature growth provides device manufacturers many unique performance and technology enabling benefits.
By growing critical temperature sensitive device layers with increased quality, we can help you improve your device efficiency, reduce resistivity and performance losses and many other benefits:

Laser Diodes

Almost 50% of the power consumed when operating GaN laser diodes is lost in the form of heat due to the highly-resistive p-type layers traditionally needed to create the electrical circuit in a laser diode.

BluGlass’ novel tunnel junction laser diode designs eliminate the need for the highly lossy p-type cladding layers in traditional laser diode devices. By replacing the p-type cladding layer with a tunnel junction and an n-type cladding layer – called a dual n-wave laser diode – BluGlass can significantly improve laser diode performance.
microLEDs and LEDs

Our patented active-as-grown tunnel junction capability has enabled the growth of cascade LEDs without any complicated ex-situ processing. We have successfully demonstrated cascade devices and blue and green stacked LEDs. Cascade LEDs are being designed to improve device performance, enable RGB applications and reduce LED efficiency droop

Low temperature p-GaN enables increased LED efficiency by reducing the thermal budget and subsequent degradation of the multi-quantum-well (MQW) quality during p-GaN growth

Low temperature MQW growth combined with low temperature p-GaN enables indium-rich InGaN and increased device performance for longer wavelengths such as green, yellow, and red

Low temperature RPCVD has the potential to reduce bowing and cracking of large silicon wafers during III nitride growth. Its inherent process also reduces the complexity of the required strain management, making RPCVD a highly versatile, substrate agnostic growth platform
Other applications

Low temperature RCVD has the potential to reduce bowing and cracking of large silicon wafers during III nitride growth, for the manufacture of other applications such as power electronics and solar cells.

Our unique interface technology and expertise means we can work with you on a custom application and grow on your unique wafers

How RPCVD Works

RPCVD works in a similar way to MOCVD, where a mixture of gases is introduced into the reaction chamber for deposition of thin-films on a heated substrate.

Whereas MOCVD uses thermal decomposition of ammonia (NH3) to provide active nitrogen, RPCVD uses a nitrogen (N2) plasma source. The nitrogen plasma generation is not dependant on high temperature to provide a source of reactive nitrogen atoms. This allows for the growth of the GaN to be carried out at much lower temperatures than those used in MOCVD while maintaining the critical crystalline quality necessary for high performance devices.

RPCVD combines all the growth advantages of low temperature and low hydrogen levels.